DocumentCode :
2825309
Title :
Dielectric response of CaCu3Ti4O12 materials
Author :
Pengfei, Cheng ; Hanchen, Liu ; Lixun, Song ; Caijuan, Xia
Author_Institution :
Sch. of Sci., Xi´´an Polytech. Univ., Xi´´an, China
fYear :
2011
fDate :
15-17 July 2011
Firstpage :
7303
Lastpage :
7306
Abstract :
The dielectric properties and its variation of CaCu3Ti4O12 (CCTO) materials induced by the process conditions are reviewed in this paper. On the basis of heterogeneous microstructure in ceramics and single crystal, the extrinsic Maxwell-Wagner polarization mechanism of internal barrier layer capacitance (IBLC) model is discussed adequately. According to the especial crystal structure and atomic structure, possible grain semiconducting mechanism is proposed. At the end of the paper, theoretical problems in CCTO material, Maxwell-Wagner polarization and dielectric spectroscopy analysis are analyzed.
Keywords :
calcium compounds; ceramics; copper compounds; crystal structure; permittivity; CaCu3Ti4O12; Maxwell-Wagner polarization; atomic structure; ceramics; crystal structure; dielectric constant; dielectric properties; dielectric spectroscopy analysis; grain semiconducting mechanism; heterogeneous microstructure; internal barrier layer capacitance model; single crystal; Copper; Crystals; Dielectric constant; Microstructure; Spectroscopy; CaCu3Ti4O12; colossal dielectric constant; defect structure; dielectric spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
Conference_Location :
Hohhot
Print_ISBN :
978-1-4244-9436-1
Type :
conf
DOI :
10.1109/MACE.2011.5988735
Filename :
5988735
Link To Document :
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