Title :
The ability of CW operation of THz lasing from group-V donors in silicon
Author :
Shastin, V.N. ; Zhukavin, R.Kh. ; Kovalevsky, K.A. ; Tsyplenkov, V.V. ; Pavlov, S.G. ; Hubers, H.-W.
Author_Institution :
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
Abstract :
Terahertz stimulated emission (4-6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon crystal has been studied. As shown CW laser operation of P, Sb, As donors become reachable due to the laser threshold decrease induced by the stress.
Keywords :
antimony; arsenic; bismuth; colour centre lasers; elemental semiconductors; microwave photonics; phosphorus; semiconductor lasers; silicon; terahertz wave generation; CW laser operation; Si:As; Si:Bi; Si:P; Si:Sb; THz lasing; axially compressed silicon crystal; frequency 4 THz to 6 THz; group-V donor centers; laser threshold; optically excited group-V donors; terahertz stimulated emission; Bismuth; Crystals; Laser excitation; Laser transitions; Pump lasers; Silicon; Stress;
Conference_Titel :
Thz Radiation (TERA), 2010 2nd IEEE International Workshop
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-8296-2
DOI :
10.1109/TERA.2010.5619935
