DocumentCode
2825312
Title
The ability of CW operation of THz lasing from group-V donors in silicon
Author
Shastin, V.N. ; Zhukavin, R.Kh. ; Kovalevsky, K.A. ; Tsyplenkov, V.V. ; Pavlov, S.G. ; Hubers, H.-W.
Author_Institution
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
fYear
2010
fDate
12-14 Sept. 2010
Firstpage
256
Lastpage
258
Abstract
Terahertz stimulated emission (4-6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon crystal has been studied. As shown CW laser operation of P, Sb, As donors become reachable due to the laser threshold decrease induced by the stress.
Keywords
antimony; arsenic; bismuth; colour centre lasers; elemental semiconductors; microwave photonics; phosphorus; semiconductor lasers; silicon; terahertz wave generation; CW laser operation; Si:As; Si:Bi; Si:P; Si:Sb; THz lasing; axially compressed silicon crystal; frequency 4 THz to 6 THz; group-V donor centers; laser threshold; optically excited group-V donors; terahertz stimulated emission; Bismuth; Crystals; Laser excitation; Laser transitions; Pump lasers; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Thz Radiation (TERA), 2010 2nd IEEE International Workshop
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-8296-2
Type
conf
DOI
10.1109/TERA.2010.5619935
Filename
5619935
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