DocumentCode
2825323
Title
Power design challenges in deep-submicron technology
Author
Anis, Mohab ; Massoud, Yehia
Author_Institution
ECE Dept., Waterloo Univ., Ont., Canada
Volume
3
fYear
2003
fDate
27-30 Dec. 2003
Firstpage
1510
Abstract
Power-efficient designs are becoming of increasing importance in the deep-submicron regime. Over the past decade, the reduction of dynamic power was the main focus in the design of power-efficient integrated circuits. However, as technology scales down, subthreshold and gate oxide leakage currents can no longer be neglected, arid must be taken into account in any design. Furthermore, the delivery of power to CMOS integrated circuits is facing increasing challenges in the deep-submicron regime. This paper investigates the challenges associated with designing power-efficient circuits as well as the delivery of power.
Keywords
CMOS integrated circuits; integrated circuit design; leakage currents; CMOS integrated circuits; deep submicron technology; dynamic power reduction; integrated circuit design; power design challenges; CMOS integrated circuits; CMOS technology; Current density; Dynamic voltage scaling; Integrated circuit technology; Leakage current; Power dissipation; Power systems; Subthreshold current; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
ISSN
1548-3746
Print_ISBN
0-7803-8294-3
Type
conf
DOI
10.1109/MWSCAS.2003.1562583
Filename
1562583
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