Molecular Beam Epitaxy of Heterostructures on the Basis of III-V Materials for UHF Transistors

Author

Zhuravlev, K. ; Toropov, A. ; Mansurov, V.

Author_Institution

Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk

Volume

2

fYear

2006

fDate

Sept. 2006

Firstpage

589

Lastpage

590

Abstract

Described is MBE technology, whose essence is the growth of heterostructures for UHF transistors including nitride technology. We demonstrate that buffer layer optimization allows improving GaAs FETs parameters. Procedures of AlGaAs/InGaAs/GaAs heterostructures growth for PHEMT, as well as the heterostructures themselves, have been also optimized. Presented in this paper is the data on MBE technology development, especially as regards GaN/AlGaN heterostructures with two-dimensional electronic gas for HEMT

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; buffer layers; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; AlGaAs-InGaAs-GaAs; FET parameter; GaN-AlGaN; III-V materials; MBE technology; PHEMT; UHF transistors; buffer layer optimization; field effect transistor; heterostructures growth; molecular beam epitaxy; nitride technology; pseudomorphic high electron mobility transistor; two-dimensional electronic gas; Aluminum gallium nitride; Buffer layers; FETs; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Indium gallium arsenide; Molecular beam epitaxial growth; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

966-7968-92-8

Electronic_ISBN

966-7968-92-8

Type

conf

DOI

10.1109/CRMICO.2006.256118

Filename

4023400