Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation

Dioxide defect formation has been found out with the aid of modern research methods. It has been ascertained that both requirements of oxide cultivation and deficiency of initial silicon influence on processes of crystalline defects formation in dioxide, and the maximum of a crystalline phase density falls at border dioxide-silicon. Initial silicon impurity and structural defects are the centers of crystal phase condensation with higher velocity of dioxide etching. The dioxide porosity depends not only on requirements of reception, but also on initial silicon deficiency