Title :
23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product
Author :
Huber, D. ; Bitter, M. ; Romier, S. ; Schnyder, I. ; Baultnecht, R. ; Morf, T. ; Bergamaschi, C. ; Jackel, H.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
We report on the design, fabrication and characterization of a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of λ=1.55 μm. The three-stage-amplifier achieves a transimpedance of 54.5 dBΩ (530 Ω) and the optical/electrical -3dB-bandwidth of the entire receiver is 23 GHz. This corresponds to a transimpedance-bandwidth product of 12 THzΩ, which is one of the highest values published to date
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.55 micron; 23 GHz; InP; InP/InGaAs PIN/HBT photoreceiver; gain-bandwidth product; monolithic integration; three-stage amplifier; transimpedance; Bandwidth; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Optical amplifiers; Optical device fabrication; Optical receivers; Pulse amplifiers; Pulse measurements;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712507
