23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product

Author

Huber, D. ; Bitter, M. ; Romier, S. ; Schnyder, I. ; Baultnecht, R. ; Morf, T. ; Bergamaschi, C. ; Jackel, H.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1998

fDate

11-15 May 1998

Firstpage

447

Lastpage

450

Abstract

We report on the design, fabrication and characterization of a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of λ=1.55 μm. The three-stage-amplifier achieves a transimpedance of 54.5 dBΩ (530 Ω) and the optical/electrical -3dB-bandwidth of the entire receiver is 23 GHz. This corresponds to a transimpedance-bandwidth product of 12 THzΩ, which is one of the highest values published to date

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.55 micron; 23 GHz; InP; InP/InGaAs PIN/HBT photoreceiver; gain-bandwidth product; monolithic integration; three-stage amplifier; transimpedance; Bandwidth; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Optical amplifiers; Optical device fabrication; Optical receivers; Pulse amplifiers; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712507

Filename

712507