Calculation of Electron Mobility in Thin Undoped GaAs Quantum Wires

The dependencies of electron mobility in thin undoped GaAs quantum wires on the lattice temperature and surface roughness correlation length have been calculated at the electric quantum limit using Monte Carlo method. All the dominant scattering mechanisms of charge carriers in GaAs quantum wires are taken into account in considered case. The scatterers are polar optical phonons, surface phonons, acoustic phonons and surface roughness. Moreover, it is taken into account the collisional broadening (electron energy uncertainty) and the nonparabolicity in the dispersion relation between the wave vector and kinetic energy of charge carriers while calculating particles scattering rate and simulation of their transportation in the electric field