Title :
Simulation of Single-Electron Silicon-based Structures Using Physical Models
Author :
Abramov, I.I. ; Baranov, A.L.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk
Abstract :
The approach suggested earlier for metal single-electron structures simulation using physical models is suitable for composite structures. The modified model has been proved to be adequate compared with experimental data
Keywords :
composite materials; elemental semiconductors; semiconductor device models; silicon; single electron devices; titanium compounds; TiSi2; composite single-electron structures simulation; metal single-electron structures simulation; physical model design; single-electron silicon-based structures; tunnel junction; Equations; IEEE catalog; Informatics; Microwave technology; Organizing;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256146
