• DocumentCode
    2826757
  • Title

    Simulation of Single-Electron Silicon-based Structures Using Physical Models

  • Author

    Abramov, I.I. ; Baranov, A.L.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk
  • Volume
    2
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    661
  • Lastpage
    662
  • Abstract
    The approach suggested earlier for metal single-electron structures simulation using physical models is suitable for composite structures. The modified model has been proved to be adequate compared with experimental data
  • Keywords
    composite materials; elemental semiconductors; semiconductor device models; silicon; single electron devices; titanium compounds; TiSi2; composite single-electron structures simulation; metal single-electron structures simulation; physical model design; single-electron silicon-based structures; tunnel junction; Equations; IEEE catalog; Informatics; Microwave technology; Organizing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256146
  • Filename
    4023428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2826757