Title :
Simulation of GaAs/AlGaAs RTD using One-Band Combined Model
Author :
Abramov, I.I. ; Goncharenko, I.A.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk
Abstract :
Presented in this paper are investigations regarding the influence of doping concentration in RTD barriers and on IV-characteristics. One-band combined RTD model is based on semiclassical and quantum-mechanical (the wave-function formalism) approaches. It takes into account the effect of charge in different regions, including surface charge at heterointerfaces, the shape of band offsets, scattering in the quantum well, and resistances of extended passive regions. In order to describe the barrier and quantum well shapes, hyperbolic approximation has been used. IV-characteristics calculation was carried out for double-barrier RTD made of GaAs/Al0.4Ga 0.6As
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; resonant tunnelling diodes; semiconductor device models; GaAs-AlGaAs; IV-characteristics; RTD barriers; doping concentration; one-band combined model; quantum mechanical approaches; quantum well shapes; semiclassical approaches; surface charge; Gallium arsenide; Helium; IEEE catalog; Microwave technology; Neodymium; Organizing;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256148
