Simulation of GaAs/AlGaAs RTD using One-Band Combined Model

Author

Abramov, I.I. ; Goncharenko, I.A.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk

Volume

2

fYear

2006

fDate

Sept. 2006

Firstpage

665

Lastpage

666

Abstract

Presented in this paper are investigations regarding the influence of doping concentration in RTD barriers and on IV-characteristics. One-band combined RTD model is based on semiclassical and quantum-mechanical (the wave-function formalism) approaches. It takes into account the effect of charge in different regions, including surface charge at heterointerfaces, the shape of band offsets, scattering in the quantum well, and resistances of extended passive regions. In order to describe the barrier and quantum well shapes, hyperbolic approximation has been used. IV-characteristics calculation was carried out for double-barrier RTD made of GaAs/Al_0.4Ga _0.6As

Keywords

III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; resonant tunnelling diodes; semiconductor device models; GaAs-AlGaAs; IV-characteristics; RTD barriers; doping concentration; one-band combined model; quantum mechanical approaches; quantum well shapes; semiclassical approaches; surface charge; Gallium arsenide; Helium; IEEE catalog; Microwave technology; Neodymium; Organizing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

966-7968-92-8

Electronic_ISBN

966-7968-92-8

Type

conf

DOI

10.1109/CRMICO.2006.256148

Filename

4023430