• DocumentCode
    2826800
  • Title

    The Influence of «Lacing» Interface Positions on I-V Characteristics for RTD Combined Model

  • Author

    Abramov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, N.V.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk
  • Volume
    2
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    667
  • Lastpage
    668
  • Abstract
    The influence of "lacing" interface positions on I-V characteristics of double-barrier resonant tunneling diodes (RTD) was investigated using two-band combined model
  • Keywords
    resonant tunnelling diodes; semiconductor device models; I-V characteristics; RTD combined model; double-barrier resonant tunneling diodes; solid-state nanoelectronics; two-band combined model; Diodes; Electronic mail; Gallium arsenide; Informatics; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256149
  • Filename
    4023431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2826800