Title :
The Influence of «Lacing» Interface Positions on I-V Characteristics for RTD Combined Model
Author :
Abramov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, N.V.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk
Abstract :
The influence of "lacing" interface positions on I-V characteristics of double-barrier resonant tunneling diodes (RTD) was investigated using two-band combined model
Keywords :
resonant tunnelling diodes; semiconductor device models; I-V characteristics; RTD combined model; double-barrier resonant tunneling diodes; solid-state nanoelectronics; two-band combined model; Diodes; Electronic mail; Gallium arsenide; Informatics; Resonant tunneling devices;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256149
