Title :
Design and nonlinear analysis of a dual-band Doherty power amplifier for ISM and LMDS applications
Author :
Taghian, Fatemeh ; Abdipour, A. ; Mohammadi, Arash ; Roodaki, P.M.
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol. Tehran, Tehran, Iran
Abstract :
In this paper, the design and nonlinear analysis of a dual-band mm-wave Doherty power amplifier is presented. The Doherty power amplifier has been designed to operate simultaneously at 24GHz for ISM band and 28 GHz for LMDS applications with 1 GHz bandwidth at each band, using Large-signal model of 0.15μm GaAs PHEMT transistor with 6 dB of output power back off at both frequencies. Analysis results show that DPA improves both efficiency and linearity in a wide power ranges for these two frequency bands.
Keywords :
III-V semiconductors; gallium arsenide; millimetre wave power amplifiers; power HEMT; DPA; GaAs; ISM band application; LMDS application; PHEMT transistor; bandwidth 1 GHz; dual-band mm-wave Doherty power amplifier; frequency 24 GHz; frequency 28 GHz; large-signal model; local multipoint communication service; nonlinear analysis; size 0.15 mum; Dual band; Microwave amplifiers; Microwave circuits; Microwave communication; Power amplifiers; Power generation; Doherty power amplifier; GaAS PHEMT; ISM band; LMDS; dual-band; millimeter wave;
Conference_Titel :
Applied Electromagnetics Conference (AEMC), 2011 IEEE
Conference_Location :
Kolkata
Print_ISBN :
978-1-4577-1098-8
DOI :
10.1109/AEMC.2011.6256883
