DocumentCode :
2827022
Title :
Restrictions in Using Large Signal and Small Signal Models of FET Transistors
Author :
Raboch, Jiri ; Hoffmann, Karel
Author_Institution :
Czech Tech. Univ., Prague
fYear :
2007
fDate :
24-25 April 2007
Firstpage :
1
Lastpage :
4
Abstract :
A frequency doubler from 8.5 to 17 GHz was used to study reliability and accuracy of large signal Curtis Cubic model of HEMT transistor. Excelics EPA018A-70 was used for the tests. Two large signal designs and realizations for working points in class B and open state (near Idss) were made. Another design based on measured small signal s-parameters only was done for comparison, too. AWR Microwave Office was used for simulations. All designs were realized and measured. Significant discrepancies between simulated and measured parameters for Curtis Cubic model operated in class B were observed.
Keywords :
high electron mobility transistors; semiconductor device models; AWR Microwave Office; Curtis Cubic model; FET transistor models; HEMT transistor; frequency doubler; large signal model; Circuit testing; Frequency; HEMTs; Microwave FETs; Microwave transistors; Packaging; Power harmonic filters; Scattering parameters; Signal design; Voltage; FET Transistor; Frequency Doubler; Large Signal Model; Modeling, Measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radioelektronika, 2007. 17th International Conference
Conference_Location :
Brno
Print_ISBN :
1-4244-0821-0
Electronic_ISBN :
1-4244-0822-9
Type :
conf
DOI :
10.1109/RADIOELEK.2007.371674
Filename :
4234269
Link To Document :
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