Title :
Influences of the Silicon schottki FET Active Area Irregularity Upon Volt-Ampere Characteristics and Wunsch-Bell Dependency
Author :
Akhramovich, L. ; Zuev, S. ; Starostenko, V. ; Tereschenko, V. ; Churyumov, G. ; Borisov, A. ; Petrov, A.
Author_Institution :
Vernadsky Tavrical Nat. Univ., Simferopol
Abstract :
In the paper the results of numerical calculations of heterogeneity influence of active area silicon FET on development of electrothermal processes in a crystal of the transistor from the beginning of avalanche breakdown before catastrophic thermal breakdown of the device stepping at achievement of values of a lattice temperature in the current cord area, the appropriate temperature of fusion Au of substrate are presented
Keywords :
Schottky gate field effect transistors; avalanche breakdown; Wunsch-Bell dependency; avalanche breakdown; catastrophic thermal breakdown; electrothermal processes; fusion temperature; silicon Schottky FET active area; volt-ampere characteristics; FETs; Gallium arsenide; Geometry; Gold; Helium; IEEE catalog; Microwave technology; Organizing; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256174
