Title :
Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer
Author :
Maezawa, Koichi ; Ito, Taihei ; Kadoda, Azusa ; Nakayama, Koji ; Yasui, Yuichiro ; Mori, Masayuki ; Miyazaki, Eiji ; Mizutani, Takashi
Author_Institution :
Univ. of Toyama, Toyama, Japan
Abstract :
The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.
Keywords :
MOSFET; VLSI; alumina; elemental semiconductors; indium compounds; quantum wells; silicon; Al2O3-InSb-Si; MOSFET channel; VLSI; pseudomorphic quantum well MOSFET; transconductance; ultra thin channel layer; Aluminum oxide; Capacitance-voltage characteristics; Lattices; Logic gates; MOSFETs; Silicon; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256925
