Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs

Author

Banerjee, S.K. ; Register, L.F. ; Tutuc, E. ; Reddy, D. ; Kim, S. ; Basu, D. ; Corbet, C. ; Colombo, L. ; Carpenter, G. ; MacDonald, A.H.

Author_Institution

Univ. of Texas at Austin, Austin, TX, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

27

Lastpage

28

Abstract

In this paper, bilayer pseudospin FET (BiSFET) is fabricated and tested for the condensate using Coulomb drag measurements in the double layer graphene system. The basic BiSFET structure can also be used as 2D-2D single particle tunnel FET, and the single particle h-h and e-e 2D-2D tunnel FETs, which is graphene´s single-atom thickness could lead to more ideal interlayer tunneling characteristics provided the layers can be aligned. Single particle tunneling current calculations have been performed which show NDR characteristics, reminiscent of the BiSFET, albeit with higher operating powers.

Keywords

field effect transistors; graphene; BiSFET structure; Coulomb drag measurement; NDR characteristics; bilayer pseudospin FET; double layer graphene system; double layer graphene transistor; graphene single-atom thickness; interlayer tunneling characteristics; single particle e-e 2D-2D tunnel FET; single particle h-h 2D-2D tunnel FET; single particle tunneling current calculation; CMOS integrated circuits; Educational institutions; Logic gates; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256938

Filename

6256938