• DocumentCode
    2827902
  • Title

    N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax

  • Author

    Denninghoff, D. ; Lu, J. ; Laurent, M. ; Ahmadi, E. ; Keller, S. ; Mishra, U.K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    This paper reports 400-GHz fmax using a tall-stem T-gate on an N-polar GaN/InAIN MIS-HEMT grown by MOCVD. This is the highest reported fmax value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs. GaN-based HEMTs.
  • Keywords
    III-V semiconductors; MIS devices; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; GaN-InAlN; MOCVD; N-polar GaN HEMT; N-polar MIS-HEMT; frequency 400 GHz; tall-stem T-gate; Gallium nitride; HEMTs; MOCVD; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256939
  • Filename
    6256939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2827902