Title :
N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax
Author :
Denninghoff, D. ; Lu, J. ; Laurent, M. ; Ahmadi, E. ; Keller, S. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
This paper reports 400-GHz fmax using a tall-stem T-gate on an N-polar GaN/InAIN MIS-HEMT grown by MOCVD. This is the highest reported fmax value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs. GaN-based HEMTs.
Keywords :
III-V semiconductors; MIS devices; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; GaN-InAlN; MOCVD; N-polar GaN HEMT; N-polar MIS-HEMT; frequency 400 GHz; tall-stem T-gate; Gallium nitride; HEMTs; MOCVD; MODFETs;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256939
