DocumentCode
2828107
Title
Analysis of chip-to-chip power noise coupling on several SDRAM modules
Author
Wee, Jae-Kying ; Lee, Seongsoo ; Kim, Yorig-Ju
Author_Institution
Sch. of Electron. Eng., Soongsil Univ., Seoul, South Korea
fYear
2004
fDate
9-12 May 2004
Firstpage
205
Lastpage
208
Abstract
This paper illustrates the noise characteristics under chip´s operations according to types of packages and modules for DDR SDRAM. The impedance profiles and power noises are analyzed with SDRAM chips having TSOP package and FBGA package on TSOP-based DIMM and FBGA-based DIMM. In controversy with common concepts, the noise characteristics of FBGA package are more weak and sensitive than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.
Keywords
DRAM chips; SRAM chips; ball grid arrays; capacitors; coupled circuits; integrated circuit noise; DDR SDRAM; FBGA package; FBGA-based DIMM; SDRAM modules; TSOP package; TSOP-based DIMM; chip-to-chip power noise coupling; decoupling capacitor; impedance profiles; lead package inductance; noise isolation; noise suppression; power distribution systems; power noises; transfer noise characteristics; Circuit noise; Electronics packaging; Equations; Frequency; Inductance; Noise generators; Power generation; Power supplies; SDRAM; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Signal Propagation on Interconnects, 2004. Proceedings. 8th IEEE Workshop on
Print_ISBN
0-7803-8470-9
Type
conf
DOI
10.1109/SPI.2004.1409053
Filename
1409053
Link To Document