DocumentCode
2828121
Title
Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?
Author
Ganapathi, Kartik ; Lundstrom, Mark ; Ddin, Sayeef Salahu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., UC Berkeley, Berkeley, CA, USA
fYear
2012
fDate
18-20 June 2012
Firstpage
85
Lastpage
86
Abstract
To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a 0.2% p-type doping can enhance output resistance by 13x and intrinsic gain by 4x in 20 nm gate-length GFETs.
Keywords
field effect transistors; graphene; semiconductor doping; GFET output characteristics; drain-underlap region; p-type doping; quasi-saturation; self-consistent NEGF simulations; short-channel graphene field-effect transistors; size 20 nm; Logic gates; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2012 70th Annual
Conference_Location
University Park, TX
ISSN
1548-3770
Print_ISBN
978-1-4673-1163-2
Type
conf
DOI
10.1109/DRC.2012.6256951
Filename
6256951
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