Title :
Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?
Author :
Ganapathi, Kartik ; Lundstrom, Mark ; Ddin, Sayeef Salahu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., UC Berkeley, Berkeley, CA, USA
Abstract :
To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a 0.2% p-type doping can enhance output resistance by 13x and intrinsic gain by 4x in 20 nm gate-length GFETs.
Keywords :
field effect transistors; graphene; semiconductor doping; GFET output characteristics; drain-underlap region; p-type doping; quasi-saturation; self-consistent NEGF simulations; short-channel graphene field-effect transistors; size 20 nm; Logic gates; Substrates; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256951
