Effect of interfacial phonon-plasmon modes on electrical transport in supported graphene

Author

Ong, Zhun-Yong ; Fischetti, Massimo Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

29

Lastpage

30

Abstract

This paper discusses the effects of interfacial phonon-plasmon modes on electrical transport in supported graphene. The mobility in graphene supported on an insulating dielectric substrate (such as SiO₂) is typically due to scattering by charged impurities, surface roughness and surface polar phonon (SPP) modes. Although impurity scattering is the dominant factor limiting electron mobility it can be reduced experimentally. Coupling between the SPP and graphene plasmon modes leads to the formation of interfacial phonon-plasmon (lPP) modes which can also be interpreted as screened SPP modes. IPP dispersion and electron-IPP scattering rates were used for different substrates (SiO₂, h-BN, HfO₂ and Al₂O₃) to calculate the substrate-limited conductivity and field mobility of supported graphene.

Keywords

III-V semiconductors; aluminium compounds; boron compounds; electrical conductivity; electron mobility; graphene; hafnium compounds; impurity scattering; interface phonons; phonon dispersion relations; phonon-plasmon interactions; silicon compounds; surface phonons; surface plasmons; wide band gap semiconductors; C-Al₂O₃; C-BN; C-HfO₂; C-SiO₂; charge impurities; electrical conductivity; electrical transport; graphene electron field mobility; impurity scattering; insulating dielectric substrates; interfacial phonon-mode dispersion; interfacial phonon-plasmon mode effects; screened surface plasmon modes; supported graphene; surface polar phonon modes; surface roughness; Hafnium compounds; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256961

Filename

6256961