Title :
Effect of interfacial phonon-plasmon modes on electrical transport in supported graphene
Author :
Ong, Zhun-Yong ; Fischetti, Massimo Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
This paper discusses the effects of interfacial phonon-plasmon modes on electrical transport in supported graphene. The mobility in graphene supported on an insulating dielectric substrate (such as SiO2) is typically due to scattering by charged impurities, surface roughness and surface polar phonon (SPP) modes. Although impurity scattering is the dominant factor limiting electron mobility it can be reduced experimentally. Coupling between the SPP and graphene plasmon modes leads to the formation of interfacial phonon-plasmon (lPP) modes which can also be interpreted as screened SPP modes. IPP dispersion and electron-IPP scattering rates were used for different substrates (SiO2, h-BN, HfO2 and Al2O3) to calculate the substrate-limited conductivity and field mobility of supported graphene.
Keywords :
III-V semiconductors; aluminium compounds; boron compounds; electrical conductivity; electron mobility; graphene; hafnium compounds; impurity scattering; interface phonons; phonon dispersion relations; phonon-plasmon interactions; silicon compounds; surface phonons; surface plasmons; wide band gap semiconductors; C-Al2O3; C-BN; C-HfO2; C-SiO2; charge impurities; electrical conductivity; electrical transport; graphene electron field mobility; impurity scattering; insulating dielectric substrates; interfacial phonon-mode dispersion; interfacial phonon-plasmon mode effects; screened surface plasmon modes; supported graphene; surface polar phonon modes; surface roughness; Hafnium compounds; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256961
