Title :
Characterization and impact of traps in lattice-matched and strain-compensated In1−xGaxAs/GaAs1−ySby multiple quantum well photodiodes
Author :
Chen, Wenjie ; Chen, Baile ; Yuan, Jinrong ; Holmes, Archie ; Fay, Patrick
Author_Institution :
Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
InP-based multiple quantum well (MQW) photodiodes in the InGaAs/GaAsSb material system are promising for mid-infrared detection [1]; by including strain in these devices, the detection wavelength has been extended to beyond 3 μm [2]. However, owing to the relative immaturity of these materials, there have been few reports of the characteristics of defects in this system and their impact on device performance, especially under strain and at material compositions appropriate for MQW detectors. In this work, In0.53Ga0.47As/GaAs0.5Sb0.5 (lattice-matched) and In0.34Ga0.66As/GaAs0.25Sb0.75 (strain-compensated) MQW photodiodes are evaluated using low-frequency noise spectroscopy (LFNS) and deep level transient spectroscopy (DLTS) to detect and extract the properties of defect levels, and their impact on dark current and noise performance of the photodiodes is evaluated.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; optical noise; photodiodes; semiconductor quantum wells; spectroscopy; DLTS); InGaAs-GaAsSb; InP; LFNS; MQW detectors; dark current; deep level transient spectroscopy; defect levels; lattice matched multiple quantum well photodiodes; low frequency noise spectroscopy; midinfrared detection; noise performance; relative immaturity; strain compensated MQW photodiodes; Current measurement; Dark current; Frequency measurement; Lattices; Noise; Performance evaluation; Strain;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256970
