• DocumentCode
    2828744
  • Title

    Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method

  • Author

    Xin Miao ; Chen Zhang ; Xiuling Li

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    119
  • Lastpage
    120
  • Abstract
    Bottom-up self-assembled planar nanowires (NWs) are of great interest for device application because they can be readily integrated using conventional processing technique. Planar GaAs NWs have been demonstrated to have great crystal quality (free from top-down dry etching damages) and high electron mobility.
  • Keywords
    III-V semiconductors; electron mobility; etching; gallium arsenide; high electron mobility transistors; nanowires; GaAs; HEMT; bottom-up self-assembled planar nanowire; crystal quality; dry etching damage; electron mobility; planar GaAs NW; planar GaAs nanowire; short-channel enhancement-mode; Films; Gallium arsenide; Gold; HEMTs; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256981
  • Filename
    6256981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2828744