Title :
Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method
Author :
Xin Miao ; Chen Zhang ; Xiuling Li
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
Bottom-up self-assembled planar nanowires (NWs) are of great interest for device application because they can be readily integrated using conventional processing technique. Planar GaAs NWs have been demonstrated to have great crystal quality (free from top-down dry etching damages) and high electron mobility.
Keywords :
III-V semiconductors; electron mobility; etching; gallium arsenide; high electron mobility transistors; nanowires; GaAs; HEMT; bottom-up self-assembled planar nanowire; crystal quality; dry etching damage; electron mobility; planar GaAs NW; planar GaAs nanowire; short-channel enhancement-mode; Films; Gallium arsenide; Gold; HEMTs; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256981
