Electric field driven domain wall transfer in hybrid structures

Author

Duan, Xiaopeng ; Stephanovich, Vladimir ; Semenov, Yuriy G. ; Fangohr, Hans ; Franchin, Matteo ; Kim, Ki Wook

Author_Institution

Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

121

Lastpage

122

Abstract

We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10^-16 J/switch.

Keywords

electrons; equivalent circuits; ferromagnetic materials; low-power electronics; magnetic devices; magnetic domain walls; motion control; power consumption; FMI layer; active current; bi-state memory; effective magnetic field; electric field driven domain wall transfer; electrons; equivalent circuit model; exchange interaction; frequency 0.5 GHz to 1 GHz; hybrid structures; low energy consumption; motion control; velocity 30 m/s; Logic gates; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256982

Filename

6256982