Title :
Electric field driven domain wall transfer in hybrid structures
Author :
Duan, Xiaopeng ; Stephanovich, Vladimir ; Semenov, Yuriy G. ; Fangohr, Hans ; Franchin, Matteo ; Kim, Ki Wook
Author_Institution :
Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10-16 J/switch.
Keywords :
electrons; equivalent circuits; ferromagnetic materials; low-power electronics; magnetic devices; magnetic domain walls; motion control; power consumption; FMI layer; active current; bi-state memory; effective magnetic field; electric field driven domain wall transfer; electrons; equivalent circuit model; exchange interaction; frequency 0.5 GHz to 1 GHz; hybrid structures; low energy consumption; motion control; velocity 30 m/s; Logic gates; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256982