Possible applications of topological insulator thin films for tunnel FETs

Author

Chang, Jiwon ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

31

Lastpage

32

Abstract

We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi₂Se₃ here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, but without the sensitivity to ribbon width and edge roughness, and in some ways to narrow gap III-V TFETs but with substantially thinner quantum well widths.

Keywords

ballistic transport; bismuth compounds; field effect transistors; graphene; nanoribbons; semiconductor quantum wells; thin films; tunnel transistors; 3D topological insulator; Bi₂Se₃; TFET; TI based tunnel FET; atomic orbital basis; edge roughness; graphene nanoribbon; quantum ballistic transport simulation; quantum well width; ribbon width; spin degrees of freedom; tight-binding Hamiltonian; topological insulator thin film; Logic gates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256984

Filename

6256984