Resonant-body silicon nanowire field effect transistor without junctions

In this paper, we have demonstrated, for the first time, a self-aligned junctionless silicon nanowire electromechanical FET with two lateral 60 nm air-gap gates. The depletion charge modulation can be harnessed to transduce mechanical resonance on-chip at very high frequencies and is suited for a class of very scaled (sub-50 nm) silicon NEMS. Interfaced with advanced CMOS, these devices can be used in complex collective electromechanical signal processing based on hundreds of thousands of resonant transistors, embedded on a single silicon chip. This should foster a wide range of applications in RF, analog and extreme mass sensing.