Advanced device technologies for defense systems

Author

Zolper, John C.

Author_Institution

R&D, Raytheon Co., USA

fYear

2012

fDate

18-20 June 2012

Firstpage

9

Lastpage

12

Abstract

The performance requirements of defense systems to detect small signals in the presence of clutter or large interferers, to see further than the adversary, and discriminate between targets in a complex environment, has driven the need for ever more capable device technologies for focal plane arrays (FPAs) and monolithic microwave integrated circuits (MMICs). This paper discusses the history, and current state, of several key technologies developed at Raytheon to enable our systems to meet mission needs. The technologies include Gallium Nitride (GaN) MMICs and Mercury Cadmium Telluride (MCT) Infrared Focal Plane Arrays (FPAs). Emerging technologies for heterogeneous integration and Short Wave Infrared (SWIR) FPAs are also discussed.

Keywords

III-V semiconductors; MMIC; focal planes; gallium compounds; mercury compounds; military systems; GaN; GaN MMIC; HgCd; MCT infrared focal plane arrays; Raytheon; SWIR FPA; advanced device technologies; clutter; defense systems; gallium nitride; interferers; mercury cadmium telluride; monolithic microwave integrated circuits; short wave infrared; small signal detection; Absorption; Gallium arsenide; Gallium nitride; Lead; Silicon; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256988

Filename

6256988