DocumentCode :
2829227
Title :
MoS2-based devices and circuits
Author :
Radisavljevic, B. ; Krasnozhon, D. ; Whitwick, M.B. ; Kis, A.
Author_Institution :
Electr. Eng. Inst., EPFL, Lausanne, Switzerland
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
179
Lastpage :
180
Abstract :
Two-dimensional crystals offer several inherent advantages over conventional 3D electronic materials or 1D nanomaterials such as nanotubes and nanowires. Their planar geometry makes it easier to fabricate circuits and complex structures by tailoring 2D layers into desired shapes. Because of their atomic scale thickness, 2D materials also represent the ultimate limit of miniaturization in the vertical dimension and allow the fabrication of shorter transistors due to enhanced electrostatic control. Another advantage of 2D semiconductors is that their electronic properties (band gap, mobility, work function) can be tuned for example by changing the number of layers or applying external electric fields.
Keywords :
electrostatics; geometry; molybdenum compounds; nanowires; semiconductor materials; semiconductor nanotubes; 1D nanomaterials; 2D layers; 2D materials; 2D semiconductors; MoS2-based circuits; MoS2-based devices; MoS2; atomic scale thickness; complex structures; conventional 3D electronic materials; electronic property; enhanced electrostatic control; external electric fields; miniaturization; nanotubes; nanowires; planar geometry; shorter transistors; two-dimensional crystals; vertical dimension;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6257008
Filename :
6257008
Link To Document :
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