Title :
MoS2-based devices and circuits
Author :
Radisavljevic, B. ; Krasnozhon, D. ; Whitwick, M.B. ; Kis, A.
Author_Institution :
Electr. Eng. Inst., EPFL, Lausanne, Switzerland
Abstract :
Two-dimensional crystals offer several inherent advantages over conventional 3D electronic materials or 1D nanomaterials such as nanotubes and nanowires. Their planar geometry makes it easier to fabricate circuits and complex structures by tailoring 2D layers into desired shapes. Because of their atomic scale thickness, 2D materials also represent the ultimate limit of miniaturization in the vertical dimension and allow the fabrication of shorter transistors due to enhanced electrostatic control. Another advantage of 2D semiconductors is that their electronic properties (band gap, mobility, work function) can be tuned for example by changing the number of layers or applying external electric fields.
Keywords :
electrostatics; geometry; molybdenum compounds; nanowires; semiconductor materials; semiconductor nanotubes; 1D nanomaterials; 2D layers; 2D materials; 2D semiconductors; MoS2-based circuits; MoS2-based devices; MoS2; atomic scale thickness; complex structures; conventional 3D electronic materials; electronic property; enhanced electrostatic control; external electric fields; miniaturization; nanotubes; nanowires; planar geometry; shorter transistors; two-dimensional crystals; vertical dimension;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6257008