DocumentCode :
2829242
Title :
Monolithically integrated E/D-mode InAlN HEMTs with ƒtmax > 200/220 GHz
Author :
Song, Bo ; Sensale-Rodriguez, Berardi ; Wang, Ronghua ; Ketterson, Andrew ; Schuette, Michael ; Beam, Edward ; Saunier, Paul ; Gao, Xiang ; Guo, Shiping ; Fay, Patrick ; Jena, Debdeep ; Xing, Huili Grace
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
Although recent years have seen impressive progress on high speed GaN HEMTs [1-3], fabrication approaches allowing for monolithic integration of E and D-mode devices with simplicity and low-cost, such as gate recess and plasma treatment, remain challenging. Carrier mobility in channels subject to gate recess or plasma treatment generally degrades, which is difficult to fully recover even after post-processing annealing etc. In this work, we report high-performance monolithically integrated D-mode and gate-recessed E-mode InAlN/AlN/GaN HEMTs with a nominal gate length of 30 nm (Fig. 1) and 2-level metal interconnects. The D-mode HEMTs show an extrinsic gm of 920 mS/mm and ft/fmax of 194/220 GHz. The gate-recessed E-modes show an extrinsic gm of 1306 mS/mm and ft/fmax of 225/250 GHz. The higher speed of the E-modes stems from the higher intrinsic gm, which is also found to be comparable to that reported in epitaxially defined E-modes with a 4.5 nm barrier and 20-nm gate length by Shinohara et al. [1], ~ 1700 mS/mm, suggesting that the carrier mobility likely suffers from negligible degradation in our monolithically integrated E-mode HEMTs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; aluminium compounds; annealing; carrier mobility; gallium compounds; indium compounds; integrated circuit interconnections; 2-level metal interconnects; 200/220 GHz; D-mode HEMT; GaN; InAlN; carrier mobility; frequency 194 GHz to 220 GHz; frequency 225 GHz to 250 GHz; gate length; gate recess; monolithically integrated E-mode HEMT; plasma treatment; post-processing annealing; size 20 nm; size 30 nm; size 4.5 nm; Foot; HEMTs; Logic gates; MODFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6257009
Filename :
6257009
Link To Document :
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