• DocumentCode
    2829485
  • Title

    Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substrates

  • Author

    Sasaki, Kohei ; Higashiwaki, Masataka ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu

  • Author_Institution
    Tamura Corp., Saitama, Japan
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    In conclusion, we fabricated Ga2O3 SBDs on a single-crystal ß-Ga2O3 (010) substrate. The devices showed good device characteristics such as an ideal factor close to 1.0 and reasonably high reverse VBR. These results indicate that Ga2O3 SBDs have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN have for power device applications. This work was partially supported by NEDO and JST PRESTO programs, Japan.
  • Keywords
    III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor devices; semiconductor device manufacture; silicon compounds; wide band gap semiconductors; Ga2O3; GaN; JST PRESTO programs; Japan; NEDO; Schottky barrier diodes fabricated; SiC; power device; single-crystal substrates; widegap semiconductors; Density measurement; Gold; Material properties; Photonic band gap; Schottky barriers; Semiconductor device measurement; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257021
  • Filename
    6257021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2829485