Surface passivation of InGaAs/InP beterostructures using UV-irradiation and ozone

Author

Driad, R. ; Lu, Z.H. ; Laframboise, S. ; Scansen, D. ; McKinnon, W.R. ; McAlister, S.P.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

1998

fDate

11-15 May 1998

Firstpage

459

Lastpage

462

Abstract

The effects of dielectric films (SiO₂, Si₃N ₄), chemical treatments and UV-ozone on InP and InGaAs surfaces have been investigated. We shown that an additional UV-ozone sequence, before PECVD (plasma enhanced chemical vapor deposition) dielectric deposition, is essential to prevent the typical degradation of electrical characteristics observed in InGaAs/InP heterostructure bipolar transistors (HBTs). Compared with untreated HBTs, the UV-ozone treated devices show good improvement of the low frequency noise and HBT current gain at low currents

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; superconducting device noise; surface treatment; HBT current gain; InGaAs/InP heterostructures; InP; Si₃N₄; SiO₂; UV-irradiation; UV-ozone; chemical treatments; dielectric films; heterostructure bipolar transistors; low frequency noise; ozone; plasma enhanced chemical vapor deposition; surface passivation; Chemical vapor deposition; Degradation; Dielectric films; Indium gallium arsenide; Indium phosphide; Passivation; Plasma chemistry; Plasma devices; Plasma properties; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712523

Filename

712523