Title :
Surface passivation of InGaAs/InP beterostructures using UV-irradiation and ozone
Author :
Driad, R. ; Lu, Z.H. ; Laframboise, S. ; Scansen, D. ; McKinnon, W.R. ; McAlister, S.P.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
The effects of dielectric films (SiO2, Si3N 4), chemical treatments and UV-ozone on InP and InGaAs surfaces have been investigated. We shown that an additional UV-ozone sequence, before PECVD (plasma enhanced chemical vapor deposition) dielectric deposition, is essential to prevent the typical degradation of electrical characteristics observed in InGaAs/InP heterostructure bipolar transistors (HBTs). Compared with untreated HBTs, the UV-ozone treated devices show good improvement of the low frequency noise and HBT current gain at low currents
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; superconducting device noise; surface treatment; HBT current gain; InGaAs/InP heterostructures; InP; Si3N4; SiO2; UV-irradiation; UV-ozone; chemical treatments; dielectric films; heterostructure bipolar transistors; low frequency noise; ozone; plasma enhanced chemical vapor deposition; surface passivation; Chemical vapor deposition; Degradation; Dielectric films; Indium gallium arsenide; Indium phosphide; Passivation; Plasma chemistry; Plasma devices; Plasma properties; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712523
