• DocumentCode
    282967
  • Title

    Technologies for MMICs at microwave frequencies

  • Author

    Turner, James

  • Author_Institution
    Plessey Res. Caswell Ltd., Towcester, UK
  • fYear
    1988
  • fDate
    32169
  • Firstpage
    42401
  • Lastpage
    42407
  • Abstract
    The development of process technologies for microwave and millimetre wave integrated circuits poses a number of wide ranging challenges for the process engineer. The diversity of frequencies from about 1 GHz to 100 GHz means that a standard technology cannot be adopted for the whole frequency spectrum as the circuit topology required at each end of this frequency range differ widely. At low frequencies, ~1 GHz, traditional distributed (microstrip) style matching elements consume too much surface area of GaAs and so RF techniques using lumped inductors, capacitors and resistors are used. It is only at frequencies in excess of 6-7 GHz that fully distributed circuits are small enough to enable utilisation of this type of impedance matching
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; semiconductor device models; 1 to 100 GHz; GaAs; MMICs; circuit topology; distributed circuits; impedance matching; microstrip style matching elements; microwave frequencies; millimetre wave integrated circuits; process technologies;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Gallium Arsenide, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    208746