DocumentCode :
282967
Title :
Technologies for MMICs at microwave frequencies
Author :
Turner, James
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
fYear :
1988
fDate :
32169
Firstpage :
42401
Lastpage :
42407
Abstract :
The development of process technologies for microwave and millimetre wave integrated circuits poses a number of wide ranging challenges for the process engineer. The diversity of frequencies from about 1 GHz to 100 GHz means that a standard technology cannot be adopted for the whole frequency spectrum as the circuit topology required at each end of this frequency range differ widely. At low frequencies, ~1 GHz, traditional distributed (microstrip) style matching elements consume too much surface area of GaAs and so RF techniques using lumped inductors, capacitors and resistors are used. It is only at frequencies in excess of 6-7 GHz that fully distributed circuits are small enough to enable utilisation of this type of impedance matching
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; semiconductor device models; 1 to 100 GHz; GaAs; MMICs; circuit topology; distributed circuits; impedance matching; microstrip style matching elements; microwave frequencies; millimetre wave integrated circuits; process technologies;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Gallium Arsenide, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
208746
Link To Document :
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