Title :
Modeling of GaAs digital ICs
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
As custom design approach is needed to achieve the highest performance from a MESFET process. Designers on either an in-house or foundry process, can expect to have access to models which fully describe the circuit elements at their disposal. These models will include device-to-device variations, and the temperature dependence of the various parameters. Designers must, however, expect to derive all the layout dependent capacitances for themselves. There are as yet no parameter extraction software aids for GaAs circuits and automatic placement sacrifices too much circuit performance, but the task of the designer is being eased by the rapidly expanding standard cell libraries. If some performance can be sacrificed, for the sake of reduced design time, then logical analysis can be used. Several foundries are targetting this area of the market and are offering a range of gate arrays which have several speed-power options
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; digital integrated circuits; field effect integrated circuits; gallium arsenide; semiconductor device models; GaAs; MESFET; circuit elements; custom design; digital ICs; gate arrays; logical analysis; models; speed-power options; standard cell libraries;
Conference_Titel :
Gallium Arsenide, IEE Colloquium on
Conference_Location :
London