Title :
HEMT MMIC-circuits for millimetre-wave telecommunications systems
Author :
Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; De Raedt, W. ; Van Hove, M. ; Van Rossum, M.
Author_Institution :
ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
Abstract :
Future telecommunications systems (e.g. PCS) will use GaAs- and InP-based integrated circuits operating at mm-wave frequencies. The most important figures of merit as cut-off frequency and maximum oscillation frequency of the 3 GaAs and InP-based HEMT MMIC-technologies developed at IMEC, are discussed and compared in this paper. Different design examples of high-frequency integrated circuits are presented showing the high potential of HEMT MMICs
Keywords :
gallium arsenide; GaAs; GaAs-based integrated circuits; HEMT MMIC-circuits; InP; InP-based integrated circuits; PCS; amplifiers; cut-off frequency; design examples; figures of merit; high-frequency integrated circuits; maximum oscillation frequency; millimetre-wave telecommunications systems; CMOS technology; Costs; Cutoff frequency; Electrons; Gallium arsenide; HEMTs; Indium phosphide; Lattices; Noise figure; Photonic band gap;
Conference_Titel :
Communications and Vehicular Technology in the Benelux, 1994., IEEE Second Symposium on
Conference_Location :
Louvain la Neuve
DOI :
10.1109/SCVT.1994.574152
