Title :
Oxide-free InP MIS structures having an ultra-narrow silicon surface quantum well
Author :
Takahashi, Hiroshi ; Hasegawa, Hideki
Author_Institution :
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
This paper proposes and experimentally evaluates a novel oxide-free InP MIS structure having an ultra-narrow silicon surface quantum well. A theoretical calculation showed that the structure becomes free of gap states for silicon layer thicknesses below 5 Å. Experimentally, an ultra-narrow silicon surface quantum well was realized by direct nitridation of MBE Si layer by ECR N2 plasma and its detailed XPS analysis. A stable MIS structure with Nssmin=2×1010 cm-2 eV-1 was successfully realized
Keywords :
III-V semiconductors; MIS structures; X-ray photoelectron spectra; elemental semiconductors; energy gap; indium compounds; interface states; nitridation; semiconductor quantum wells; silicon; 5 A; ECR N2 plasma; InP; MBE Si layer; N2; Si; XPS analysis; direct nitridation; gap states; oxide-free InP MIS structures; ultra-narrow Si surface quantum well; Charge carrier processes; Fabrication; Indium phosphide; Interface states; Plasma confinement; Plasma devices; Plasma materials processing; Quantum mechanics; Silicon compounds; Thermal conductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712525
