Title :
First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior
Author :
Hwang, Wan Sik ; Remskar, Maja ; Yan, Rusen ; Protasenko, Vladimir ; Tahy, Kristof ; Chae, Soo Doo ; Xing, Huili ; Seabaugh, Alan ; Jena, Debdeep
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Two-dimensional (2D) WS2 transistors were fabricated and characterized for the first time from chemically-synthesized material. Raman measurements confirm the 2D crystal nature of the material, and the presence of a bandgap leads to high on/off current ratios and current saturation in the transistors at room temperature. In addition, the observed photoresponse of the 2D layered semiconductor can enable optical device applications.
Keywords :
electron beam lithography; energy gap; field effect transistors; tungsten compounds; 2D crystal nature; 2D layered semiconductor; Raman measurement; WS2; WS2 FET; ambipolar behavior; bandgap; chemically-synthesized material; electron beam lithography; optical device application; photoresponse; room temperature modulation; two-dimensional WS2 transistors; Current measurement; Logic gates; Metals; Optical modulation;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6257042
