• DocumentCode
    2829905
  • Title

    First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior

  • Author

    Hwang, Wan Sik ; Remskar, Maja ; Yan, Rusen ; Protasenko, Vladimir ; Tahy, Kristof ; Chae, Soo Doo ; Xing, Huili ; Seabaugh, Alan ; Jena, Debdeep

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    187
  • Lastpage
    188
  • Abstract
    Two-dimensional (2D) WS2 transistors were fabricated and characterized for the first time from chemically-synthesized material. Raman measurements confirm the 2D crystal nature of the material, and the presence of a bandgap leads to high on/off current ratios and current saturation in the transistors at room temperature. In addition, the observed photoresponse of the 2D layered semiconductor can enable optical device applications.
  • Keywords
    electron beam lithography; energy gap; field effect transistors; tungsten compounds; 2D crystal nature; 2D layered semiconductor; Raman measurement; WS2; WS2 FET; ambipolar behavior; bandgap; chemically-synthesized material; electron beam lithography; optical device application; photoresponse; room temperature modulation; two-dimensional WS2 transistors; Current measurement; Logic gates; Metals; Optical modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257042
  • Filename
    6257042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2829905