DocumentCode
283005
Title
Monolithic low noise amplifier-a foundry GaAs IC
Author
Nicholas, Jonathan M C ; Hobbs, Caroline S.
Author_Institution
Thorn EMI Central Res. Labs., Hayes, UK
fYear
1988
fDate
32185
Firstpage
42401
Lastpage
42404
Abstract
The authors describe the development of a monolithic 4-6 GHz low noise amplifier for an application in phased array radar. The design rules were purchased from Plessey 3-5 Ltd. and the design and layout were carried out using standard CAD software. The resulting tape was delivered to the foundry where the chips were fabricated. The amplifier worked satisfactorily on the first design iteration giving over 15 dB of gain, less than 3.5 dB noise figure and matches of better than 2:1. The design procedure, and the measurements on the devices, are described
Keywords
III-V semiconductors; circuit layout CAD; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; microwave amplifiers; microwave integrated circuits; radar systems; 15 dB; 3.5 dB; 4 to 6 GHz; CAD software; GaAs; LNA; MMIC; Plessey 3-5 Ltd.; SHF; circuit layout; design procedure; design rules; first design iteration; foundry; monolithic low noise amplifier; phased array radar;
fLanguage
English
Publisher
iet
Conference_Titel
Solid State Components for Radar, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
208800
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