DocumentCode :
283005
Title :
Monolithic low noise amplifier-a foundry GaAs IC
Author :
Nicholas, Jonathan M C ; Hobbs, Caroline S.
Author_Institution :
Thorn EMI Central Res. Labs., Hayes, UK
fYear :
1988
fDate :
32185
Firstpage :
42401
Lastpage :
42404
Abstract :
The authors describe the development of a monolithic 4-6 GHz low noise amplifier for an application in phased array radar. The design rules were purchased from Plessey 3-5 Ltd. and the design and layout were carried out using standard CAD software. The resulting tape was delivered to the foundry where the chips were fabricated. The amplifier worked satisfactorily on the first design iteration giving over 15 dB of gain, less than 3.5 dB noise figure and matches of better than 2:1. The design procedure, and the measurements on the devices, are described
Keywords :
III-V semiconductors; circuit layout CAD; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; microwave amplifiers; microwave integrated circuits; radar systems; 15 dB; 3.5 dB; 4 to 6 GHz; CAD software; GaAs; LNA; MMIC; Plessey 3-5 Ltd.; SHF; circuit layout; design procedure; design rules; first design iteration; foundry; monolithic low noise amplifier; phased array radar;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Solid State Components for Radar, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
208800
Link To Document :
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