Title :
Recent investigations into W-band pulsed IMPATT oscillator design
Author_Institution :
Thorn EMI Electronics Ltd., Feltham, UK
Abstract :
The author reports on some of the experimental techniques used and results achieved during development work on W-band pulsed IMPATT oscillators. The particular application of these sources was to form an injection locked amplifier chain as part of a frequency agile data gathering radar. The oscillators were based on a modular waveguide cavity allowing for ease of construction and interchangeability. Diodes were silicon double-drift devices and were nominally centred on 94 GHz with various output powers between 1 W and 10 W
Keywords :
IMPATT diodes; cavity resonators; elemental semiconductors; frequency agility; microwave oscillators; military equipment; radar systems; silicon; 1 to 10 W; 94 GHz; EHF; Si diodes; W-band pulsed IMPATT oscillators; frequency agile data gathering radar; injection locked amplifier chain; modular waveguide cavity; silicon diodes; silicon double-drift devices;
Conference_Titel :
Solid State Components for Radar, IEE Colloquium on
Conference_Location :
London
