Title :
Experience in Development of High Power IMPATT Diode Sources for MM-Wave Range
Author :
Karushkin, N. ; Kasatkin, L. ; Malcev, S.
Abstract :
IMPATT oscillators are the most powerful pulsed semiconductor sources for millimeter wave band. The methods for pulsed IMPATT oscillator parameters stabilization within a wide range of ambient temperatures are described. Combination of current compensation method, semiconductor diode preheating by additional current, the use of stabilization resonator in free running oscillators provides stability of the output signal amplitude and phase. On the base of injected-locked pulsed IMPATT diodes combiners in the MM wave range the high power output coherent signal is achievable (Pout>100W at A,=8 mm)
Keywords :
IMPATT oscillators; injection locked oscillators; millimetre wave diodes; millimetre wave oscillators; IMPATT oscillator; MM wave range; ambient temperature; current compensation method; injected-locked pulsed IMPATT diode; pulsed semiconductor source; semiconductor diode preheating; stabilization resonator; Diodes; Helium; Magnetic flux leakage;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256331
