• DocumentCode
    2830330
  • Title

    Experience in Development of High Power IMPATT Diode Sources for MM-Wave Range

  • Author

    Karushkin, N. ; Kasatkin, L. ; Malcev, S.

  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    135
  • Lastpage
    137
  • Abstract
    IMPATT oscillators are the most powerful pulsed semiconductor sources for millimeter wave band. The methods for pulsed IMPATT oscillator parameters stabilization within a wide range of ambient temperatures are described. Combination of current compensation method, semiconductor diode preheating by additional current, the use of stabilization resonator in free running oscillators provides stability of the output signal amplitude and phase. On the base of injected-locked pulsed IMPATT diodes combiners in the MM wave range the high power output coherent signal is achievable (Pout>100W at A,=8 mm)
  • Keywords
    IMPATT oscillators; injection locked oscillators; millimetre wave diodes; millimetre wave oscillators; IMPATT oscillator; MM wave range; ambient temperature; current compensation method; injected-locked pulsed IMPATT diode; pulsed semiconductor source; semiconductor diode preheating; stabilization resonator; Diodes; Helium; Magnetic flux leakage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256331
  • Filename
    4023636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2830330