Title :
InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array with low capacitance air-bridge coplanar metal waveguides and its monolithic WDM applications
Author :
Hsu, Shih-Hsien ; Tabatabaei, S.A. ; Agarwala, S. ; Johnson, F.G. ; Hrynlewicz, J.V. ; Cho, P. ; Chen, Y.J. ; Stone, D.R.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
Summary form only given. It is highly desirable to develop techniques for the monolithic integration of InGaAs photodiodes operating in the 1.0-1.6-/spl mu/m wavelength range with AlGaAs-GaAs-based optoelectronic and electronic devices for WDM applications. For very high-speed device applications, air-bridge coplanar metal waveguides can efficiently reduce the parasitic capacitance of diodes. In this paper, we report a novel air-bridges connected InGaAs detector on top of an AlGaAs-GaAs waveguide substrate with its monolithic WDM receiver module applications.
Keywords :
aluminium compounds; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; modules; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; wavelength division multiplexing; 1 to 1.6 mum; AlGaAs-GaAs; AlGaAs-GaAs waveguide substrate; AlGaAs-GaAs-based optoelectronic devices; InGaAs; InGaAs detector; InGaAs photodiodes; InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array; WDM applications; air-bridge coplanar metal waveguides; low capacitance air-bridge coplanar metal waveguides; monolithic WDM applications; monolithic WDM receiver module applications; monolithic integration; parasitic capacitance; very high-speed device applications; Coplanar waveguides; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; P-i-n diodes; PIN photodiodes; Parasitic capacitance; Photodetectors; Wavelength division multiplexing;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 1998. OFC '98., Technical Digest
Conference_Location :
San Jose, CA, USA
Print_ISBN :
1-55752-521-8
DOI :
10.1109/OFC.1998.657319
