Title :
Cascode Circuit of High-Power Microwave FET
Author_Institution :
FSUE, Fryazino
Abstract :
An opportunity of gain increase and transistor chip miniaturizing is considered using cascode circuit. Two-stage cascode circuit results in extra 3 dB small-signal gain. The considered design of powerful microwave FETs will allow reducing the area of transistor chip and dimensions of the hybrid amplifier as a whole
Keywords :
microwave field effect transistors; power amplifiers; power field effect transistors; field effect transistor; high-power microwave FET; hybrid amplifier; transistor chip; two-stage cascode circuit; Circuit topology; Helium; IEEE catalog; Indium tin oxide; Microwave FETs; Microwave circuits; Microwave technology; Organizing; Voltage;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256347
