Title :
800 MHz and 1035 MHz UHF Class E Power Amplifiers on CLY5 MESFET
Author :
Krizhanovski, V. ; Printsovskii, V.
Author_Institution :
Donetsk Nat. Univ.
Abstract :
Two UHF Class E power amplifiers were designed, simulated, and fabricated with operating frequencies 800 MHz and 1035 MHz, respectively. The high efficiency DC-AC power conversion in power amplifier (PA) was obtained using class E mode operation
Keywords :
DC-AC power convertors; Schottky gate field effect transistors; UHF power amplifiers; 1035 MHz; 800 MHz; CLY5 MESFET; DC-AC power conversion; UHF class E power amplifier; metal semiconductor field effect transistor; Gallium arsenide; Indium tin oxide; MESFETs; Power amplifiers;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256348