DocumentCode :
283065
Title :
Transistors for power switching
Author :
Critchley, D.R. ; Jones, R.
Author_Institution :
GEC Ind. Controls Ltd., Kidsgrove, UK
fYear :
1988
fDate :
32209
Firstpage :
42401
Lastpage :
42405
Abstract :
Recent advances in bipolar transistor technology have been considerable. Transistors can now be applied economically and reliably to a wide range of power switching applications, many of which were impossible with other power semiconductors. The authors discuss the characteristics and application of transistors as high frequency power switches operating from supplies up to approximately 575V AC (1000V DC link maximum). Both standard triple Darlington bipolar transistors (`Triplingtons´) and the newer insulated gate bipolar transistors (IGBT) are considered
Keywords :
bipolar transistors; power transistors; semiconductor switches; 1000 V; 575 V; bipolar transistor; high frequency power switches; insulated gate bipolar transistors; power semiconductors; power switching; semiconductor switches; triple Darlington bipolar transistors;
fLanguage :
English
Publisher :
iet
Conference_Titel :
GTO's, Rival Devices and Applications, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
208903
Link To Document :
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