• DocumentCode
    2830760
  • Title

    Integration of Depletion-and Enhancement-Mode AlGaAs/GaAs MESFET for High-Speed MMIC Application

  • Author

    Gusenkova, A. ; Maleev, N. ; Mikhrin, V. ; Kuzmenkov, A. ; Vasil´ev, A. ; Kulagina, M. ; Zhukov, A. ; Shulenkov, A.

  • Author_Institution
    Minsk R&D Inst. of Radiomater.
  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    193
  • Lastpage
    194
  • Abstract
    An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al1-xGax As etch-stop layers is presented. The technology proposed provides precise control of channel etching depth and demonstrates high uniformity of device characteristics
  • Keywords
    III-V semiconductors; MMIC; Schottky gate field effect transistors; aluminium compounds; etching; gallium arsenide; high-speed integrated circuits; Al1-xGaxAs-GaAs; GaAs; MESFET; channel etching; etch-stop layers; high-speed MMIC application; selective wet etching; Argon; Gallium arsenide; IEEE catalog; MESFETs; MMICs; Microwave technology; Organizing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256357
  • Filename
    4023662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2830760