DocumentCode :
2830820
Title :
High-temperature thermoelectric properties of α- and β-Eu8Ga16Ge30
Author :
Bentien, A. ; Paschen, S. ; Pacheco, V. ; Grin, Yu. ; Steglich, F.
Author_Institution :
Max Planck Inst. for Chem. Phys. of Solids, Dresden, Germany
fYear :
2003
fDate :
17-21 Aug. 2003
Firstpage :
131
Lastpage :
133
Abstract :
We present the thermoelectric properties of an α-Eu8Ga16Ge30 and a β-Eu8Ga16Ge30 sample with a Ga/Ge ratio that deviates slightly from the ideal 16/30 ratio. Thermopower and resistivity have been measured up to 750 K. From an extrapolation of the thermal conductivity, measured up to 200 K, to higher temperatures we estimate the dimensionless figure of merit to have a maximum of 0.55 and 1.1 at 700 K and 750 K for the α and β sample, respectively. The thermoelectric properties of the a sample are, at highest temperatures, degraded by the excitation of carriers into the conduction band.
Keywords :
carrier mobility; energy gap; europium compounds; gallium compounds; germanium compounds; thermal conductivity; thermoelectricity; 200 K; 700 K; 750 K; Eu8Ga16Ge30; carrier excitation; conduction band; high-temperature thermoelectric properties; resistivity; thermopower; Chemicals; Electrons; Impurities; Land surface temperature; Phonons; Photonic band gap; Scattering parameters; Solid modeling; Temperature dependence; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
Type :
conf
DOI :
10.1109/ICT.2003.1287466
Filename :
1287466
Link To Document :
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