DocumentCode
2830820
Title
High-temperature thermoelectric properties of α- and β-Eu8Ga16Ge30
Author
Bentien, A. ; Paschen, S. ; Pacheco, V. ; Grin, Yu. ; Steglich, F.
Author_Institution
Max Planck Inst. for Chem. Phys. of Solids, Dresden, Germany
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
131
Lastpage
133
Abstract
We present the thermoelectric properties of an α-Eu8Ga16Ge30 and a β-Eu8Ga16Ge30 sample with a Ga/Ge ratio that deviates slightly from the ideal 16/30 ratio. Thermopower and resistivity have been measured up to 750 K. From an extrapolation of the thermal conductivity, measured up to 200 K, to higher temperatures we estimate the dimensionless figure of merit to have a maximum of 0.55 and 1.1 at 700 K and 750 K for the α and β sample, respectively. The thermoelectric properties of the a sample are, at highest temperatures, degraded by the excitation of carriers into the conduction band.
Keywords
carrier mobility; energy gap; europium compounds; gallium compounds; germanium compounds; thermal conductivity; thermoelectricity; 200 K; 700 K; 750 K; Eu8Ga16Ge30; carrier excitation; conduction band; high-temperature thermoelectric properties; resistivity; thermopower; Chemicals; Electrons; Impurities; Land surface temperature; Phonons; Photonic band gap; Scattering parameters; Solid modeling; Temperature dependence; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287466
Filename
1287466
Link To Document