• DocumentCode
    2830820
  • Title

    High-temperature thermoelectric properties of α- and β-Eu8Ga16Ge30

  • Author

    Bentien, A. ; Paschen, S. ; Pacheco, V. ; Grin, Yu. ; Steglich, F.

  • Author_Institution
    Max Planck Inst. for Chem. Phys. of Solids, Dresden, Germany
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    131
  • Lastpage
    133
  • Abstract
    We present the thermoelectric properties of an α-Eu8Ga16Ge30 and a β-Eu8Ga16Ge30 sample with a Ga/Ge ratio that deviates slightly from the ideal 16/30 ratio. Thermopower and resistivity have been measured up to 750 K. From an extrapolation of the thermal conductivity, measured up to 200 K, to higher temperatures we estimate the dimensionless figure of merit to have a maximum of 0.55 and 1.1 at 700 K and 750 K for the α and β sample, respectively. The thermoelectric properties of the a sample are, at highest temperatures, degraded by the excitation of carriers into the conduction band.
  • Keywords
    carrier mobility; energy gap; europium compounds; gallium compounds; germanium compounds; thermal conductivity; thermoelectricity; 200 K; 700 K; 750 K; Eu8Ga16Ge30; carrier excitation; conduction band; high-temperature thermoelectric properties; resistivity; thermopower; Chemicals; Electrons; Impurities; Land surface temperature; Phonons; Photonic band gap; Scattering parameters; Solid modeling; Temperature dependence; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287466
  • Filename
    1287466