DocumentCode :
2830828
Title :
Kinetic properties of p-type Mg2Si0.4Sn0.6 solid solutions
Author :
Fedorov, M.I. ; Zaitsev, V.K. ; Eremin, I.S. ; Gurieva, E.A. ; Burkov, A.T. ; Konstantinov, P.P. ; Vedernikov, M.V. ; Samunin, A.Yu. ; Isachenko, G.N.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear :
2003
fDate :
17-21 Aug. 2003
Firstpage :
134
Lastpage :
137
Abstract :
In this paper the results of the study of kinetic properties of the Mg2Si0.4Sn0.6 solid solution are presented. It is shown that it is possible to produce the Mg2Si0.4Sn0.6 solid solution with of p-type with various hole concentration (up to 4 · 1019cm-3). Seebeck and Hall coefficients and electrical conductivity were measured in the temperature range 100 - 800 K. The hole mobility in these solid solutions is lower than that of electrons. Some parameters of valence band are determined.
Keywords :
Hall effect; Seebeck effect; effective mass; electrical conductivity; hole density; hole mobility; manganese compounds; silicon compounds; tin compounds; Hall coefficients; Mg2Si0.4Sn0.6; Seebeck coefficients; electrical conductivity; hole-concentration; kinetic properties; p-type Mg2Si0.4Sn0.6 solid solutions; valence band; Acoustic scattering; Charge carrier processes; Conductivity; Electron mobility; Joining processes; Kinetic theory; Phonons; Solids; Temperature dependence; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
Type :
conf
DOI :
10.1109/ICT.2003.1287467
Filename :
1287467
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2830828
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