• DocumentCode
    2830828
  • Title

    Kinetic properties of p-type Mg2Si0.4Sn0.6 solid solutions

  • Author

    Fedorov, M.I. ; Zaitsev, V.K. ; Eremin, I.S. ; Gurieva, E.A. ; Burkov, A.T. ; Konstantinov, P.P. ; Vedernikov, M.V. ; Samunin, A.Yu. ; Isachenko, G.N.

  • Author_Institution
    A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    In this paper the results of the study of kinetic properties of the Mg2Si0.4Sn0.6 solid solution are presented. It is shown that it is possible to produce the Mg2Si0.4Sn0.6 solid solution with of p-type with various hole concentration (up to 4 · 1019cm-3). Seebeck and Hall coefficients and electrical conductivity were measured in the temperature range 100 - 800 K. The hole mobility in these solid solutions is lower than that of electrons. Some parameters of valence band are determined.
  • Keywords
    Hall effect; Seebeck effect; effective mass; electrical conductivity; hole density; hole mobility; manganese compounds; silicon compounds; tin compounds; Hall coefficients; Mg2Si0.4Sn0.6; Seebeck coefficients; electrical conductivity; hole-concentration; kinetic properties; p-type Mg2Si0.4Sn0.6 solid solutions; valence band; Acoustic scattering; Charge carrier processes; Conductivity; Electron mobility; Joining processes; Kinetic theory; Phonons; Solids; Temperature dependence; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287467
  • Filename
    1287467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2830828