Features of conduction mechanism in n-type Mg2Si1-xSnx solid solutions

N-type Mg₂Si_1-xSn_x solid solutions are known as efficient thermoelectrics for middle temperature range. High figure of merit of this material could be explained by the features of its band structure. The compounds Mg₂Si and Mg₂Sn have two close conduction bands giving a contribution into transport properties. In the Mg₂Si_1-xSn_x solid solutions a convergence of these bands takes place and it is necessary to take into account interband scattering. The analysis of temperature dependencies of kinetic coefficients was made, where scattering on impurities, acoustical interband and intraband scattering were taken into account. The contribution of interband scattering into Seebeck and Hall coefficients and electrical conductivity is estimated for the solid solutions of various composition and various current carrier concentration.