Title :
Explanation of Unusual Dependence of Gate-Drain Breakdown Voltage on Gate Potential in Submicron Mesfets
Author :
Buvaylik, E. ; Martynov, Y. ; Pogorelova, E.
Author_Institution :
FSUE RPC "Istok", Fryazino
Abstract :
Gate-drain breakdown voltage measurements for submicron MESFETs and HFETs reveal the dependence of this voltage on gate potential. This fact conflicts with the simple theory and with the same measurements carried out for silicon MESFETs. We attempt to overcome this conflict using MESFET, HFET numerical simulation
Keywords :
Schottky gate field effect transistors; electric potential; high electron mobility transistors; gate potential; gate-drain breakdown voltage measurement; high electron mobility transistor; metal semiconductor field effect transistor; numerical simulation; submicron HFET; submicron MESFET; Computer aided analysis; Gallium arsenide; MESFETs; Voltage;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256371
