Title :
The Spectrum of Current Oscillations of Gunn Diodes with the Impact Ionization in Moving Domains
Author :
Pavlenko, D.V. ; Prokhorov, E.D.
Author_Institution :
Semicond. & Vacuum Electron. Dept., Kharkiv Nat. Univ. of V. N. Karazin
Abstract :
The results of the numerical simulation of the GaAs Gunn diode with electric field strengths, sufficient for development of the impact ionization in the moving high-field domains, are presented. The form of current oscillations and frequency spectrums is in good agreement with experimentally measured data. It is shown that the Gunn diode operating under conditions of the impact ionization may be used as a source of wide spectrum UHF-noise
Keywords :
Gunn diodes; III-V semiconductors; UHF diodes; current fluctuations; electric field measurement; gallium arsenide; impact ionisation; numerical analysis; GaAs; GaAs Gunn diode; current oscillation; electric field strength; frequency spectrum; impact ionization; moving high-field domains; numerical simulation; wide spectrum UHF-noise; Diodes; Gallium arsenide; Gunn devices; IEEE catalog; Impact ionization; Microwave technology; Organizing;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256373
