• DocumentCode
    2831028
  • Title

    Advantageous power factor anomaly in Mn1.68-XCu0.6+X+Y+ZCo0.24-YNi0.48-zO4 thin films

  • Author

    Moyer, Jerome G. ; Kukuruznyak, Dmitry A. ; Prowse, Michael S. ; Ohuchi, Fumio S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of Washington, Seattle, WA, USA
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    180
  • Lastpage
    183
  • Abstract
    Thermopower and electrical conductivity are measured on compositional variations of a reference composition, Mn1.68-XCu.6+X+Y+ZCo.24-YNi.48$ -ZO4, and the changes in the power factor terms are examined. Thin films obtained through Metal Organic Decomposition, MOD, are used for the compositional profiling. MOD is a low-temperature fabrication route allowing for the retention of meta-stable Mn4+ and Cu1+ ions essential to these n-type materials´ properties. Conduction occurs via polaron hopping between those Mn having different oxidation states. Compositional variations modify the oxidation states of Mn and Cu, and in turn, the conductivity and thermopower values. The data indicates that replacing portions of Co with Cu raises both the conductivity and thermopower magnitude, and exchanging small amounts of Ni with Cu reduces these thermoelectric, TE, factors. Surprisingly, the effects of doping show parallel rises or declines in conductivity and thermopower magnitude.
  • Keywords
    MOCVD coatings; cobalt compounds; copper compounds; electrical conductivity; hopping conduction; manganese compounds; nickel compounds; semiconductor thin films; thermoelectric power; Mn1.68-XCu0.6+X+Y+ZCo0.24-YNi0.48-ZO4; Mn1.68-XCu0.6+X+Y+ZCo0.24-YNi0.48-ZO4 thin films; compositional profiling; compositional variations; electrical conductivity; low-temperature fabrication route; metal organic decomposition; oxidation states; polaron hopping; power factor anomaly; thermopower; Conducting materials; Conductivity measurement; Electric variables measurement; Fabrication; Oxidation; Power measurement; Reactive power; Tellurium; Thermoelectricity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287478
  • Filename
    1287478