DocumentCode
2831206
Title
The effects of parasitics on distributed high-pass MOSFET filters
Author
Li, Wei ; El-Masry, Ezz I.
Author_Institution
Dept. of Electr. Eng., Tech. Univ. of Nova Scotia, Halifax, NS, Canada
fYear
1991
fDate
11-14 Jun 1991
Firstpage
1331
Abstract
The effects of parasitic capacitances on distributed high-pass MOSFET filters are investigated. Three schemes of MOSFET configurations functioning as distributed high-pass filters are analyzed to demonstrate the parasitic effects. It is found that one high-pass configuration is superior to the other two. It maintains the high-pass characteristics regardless of the effects of parasitic capacitances
Keywords
MOS integrated circuits; active filters; high-pass filters; distributed high-pass MOSFET filters; high-pass characteristics; parasitic capacitances; parasitics; Band pass filters; Cutoff frequency; Low pass filters; MOSFET circuits; Numerical models; Parasitic capacitance; Power transmission lines; Q factor; Transfer functions; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN
0-7803-0050-5
Type
conf
DOI
10.1109/ISCAS.1991.176616
Filename
176616
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