DocumentCode
2831217
Title
Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6,5 V
Author
Dudar, N.L. ; Borzdov, V.M.
Author_Institution
Openly Join-Stock Co. Integral, Minsk, Belarus
fYear
2011
fDate
9-12 Sept. 2011
Firstpage
237
Lastpage
239
Abstract
The technology was proposed for fabrication of the silicon stabilitron with the stabilizing voltage of 6,5 V. There were defined substrate resistivity, phosphorus diffusion into substrate mode, ensuring the required stabilization voltage values under the conditions of room and two marginal values of temperatures (-55°C, +150°C). Comparison was made of the simulation data with the experiment results.
Keywords
substrates; device-process simulation; discrete silicon stabilitron; phosphorus diffusion; stabilization voltage; stabilizing voltage; substrate mode; substrate resistivity; temperature -55 C; temperature 150 C; Conductivity; Doping; Impurities; Schedules; Silicon; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Design & Test Symposium (EWDTS), 2011 9th East-West
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-1957-8
Type
conf
DOI
10.1109/EWDTS.2011.6116417
Filename
6116417
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